High‐Speed Optoelectronic Graphene Sampler at 1.55 µm Reaching Intrinsic Performances
نویسندگان
چکیده
Optoelectronic sampling is the ultimate method to perform ultra-high frequency analog-to-digital conversion. Thanks ps photo-thermo-bolometric effect in high mobility hexagonal boron nitride (h-BN) encapsulated graphene, a state-of-the-art optoelectronic sampler over 40 GHz bandwidth using 4 pulsed laser demonstrated. The superior transport and linearities of this graphene lead very harmonic rejections below –43 dB above 20 GHz. With physics-based microscopic model, it shown that harmonics are generated by optoelectronics saturation effects only appear when carrier energy reaches optical phonons, which h-BN graphene. This device first ultra-fast based on bolometric effect.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2023
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202300260